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National Semiconductor Electronic Components Datasheet

74F413 Datasheet

64 x 4 First-In First-Out Buffer Memory with Parallel I/O

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January 1995
54F 74F413
64 x 4 First-In First-Out Buffer Memory with Parallel I O
General Description
The ’F413 is an expandable fall-through type high-speed
First-In First-Out (FIFO) buffer memory organized as 64
words by four bits The 4-bit input and output registers rec-
ord and transmit respectively asynchronous data in parallel
form Control pins on the input and output allow for hand-
shaking and expansion The 4-bit wide 62-bit deep fall-
through stack has self-contained control logic
Features
Y Separate input and output clocks
Y Parallel input and output
Y Expandable without external logic
Y 15 MHz data rate
Y Supply current 160 mA max
Y Available in SOIC (300 mil only)
Commercial
74F413PC
Military
54F413DM (Note 1)
Package
Number
N16E
J16A
Package Description
16-Lead (0 300 Wide) Molded Dual-In-Line
16-Lead Ceramic Dual-In-Line
Note 1 Military grade device with environmental and burn-in processing Use suffix e DMQB
Logic Symbol
Connection Diagram
Pin Assignment
for DIP
TL F 9541 – 1
TL F 9541 – 2
TRI-STATE is a registered trademark of National Semiconductor Corporation
C1995 National Semiconductor Corporation TL F 9541
RRD-B30M105 Printed in U S A


National Semiconductor Electronic Components Datasheet

74F413 Datasheet

64 x 4 First-In First-Out Buffer Memory with Parallel I/O

No Preview Available !

Unit Loading Fan Out
Pin Names
D0 – D3
O0 – O3
IR
SI
SO
OR
MR
Description
Data Inputs
Data Outputs
Input Ready
Shift In
Shift Out
Output Ready
Master Reset
54F 74F
UL
HIGH LOW
1 0 0 667
50 13 3
1 0 0 667
1 0 0 667
1 0 0 667
1 0 0 667
1 0 0 667
Input IIH IIL
Output IOH IOL
20 mA b0 4 mA
b1 mA 8 mA
20 mA b0 4 mA
20 mA b0 4 mA
20 mA b0 4 mA
20 mA b0 4 mA
20 mA b0 4 mA
Functional Description
Data Input Data is entered into the FIFO on D0 – D3 in-
puts To enter data the Input Ready (IR) should be HIGH
indicating that the first location is ready to accept data Data
then present at the four data inputs is entered into the first
location when the Shift In (SI) is brought HIGH An SI HIGH
signal causes the IR to go LOW Data remains at the first
location until SI is brought LOW When SI is brought LOW
and the FIFO is not full IR will go HIGH indicating that more
room is available Simultaneously data will propagate to the
second location and continue shifting until it reaches the
output stage or a full location If the memory is full IR will
remain LOW
Data Transfer Once data is entered into the second cell
the transfer of any full cell to the adjacent (downstream)
empty cell is automatic activated by an on-chip control
Thus data will stack up at the end of the device while empty
locations will ‘‘bubble’’ to the front The tPT parameter de-
fines the time required for the first data to travel from input
to the output of a previously empty device
Block Diagram
Data Output Data is read from the O0 – O3 outputs When
data is shifted to the output stage Output Ready (OR) goes
HIGH indicating the presence of valid data When the OR is
HIGH data may be shifted out by bringing the Shift Out (SO)
HIGH A HIGH signal at SO causes the OR to go LOW Valid
data is maintained while the SO is HIGH When SO is
brought LOW the upstream data provided that stage has
valid data is shifted to the output stage When new valid
data is shifted to the output stage OR goes HIGH If the
FIFO is emptied OR stays LOW and O0 – O3 remains as
before i e data does not change if FIFO is empty
Input Ready and Output Ready may also be used as
status signals indicating that the FIFO is completely full (In-
put Ready stays LOW for at least tPT) or completely empty
(Output Ready stays LOW for at least tPT)
TL F 9541 – 4
2


Part Number 74F413
Description 64 x 4 First-In First-Out Buffer Memory with Parallel I/O
Maker National
Total Page 6 Pages
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