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National Semiconductor Electronic Components Datasheet

MMBT3904 Datasheet

NPN General Purpose Amplifier

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N
Discrete Power & Signal
Technologies
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2N3904
MMBT3904
C
BE
TO-92
MMPQ3904
EB
B
BE
E
B
E CC
C
CC
C
C
C
SOIC-16
C
SOT-23
Mark: 1A
E
B
PZT3904
C
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
60
6.0
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C


National Semiconductor Electronic Components Datasheet

MMBT3904 Datasheet

NPN General Purpose Amplifier

No Preview Available !

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
IBL Base Cutoff Current
ICEX Collector Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 30 V, VEB = 0
VCE = 30 V, VEB = 0
40
60
6.0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(s at)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
40
70
100
60
30
0.65
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo Input Capacitance
NF Noise Figure (except MMPQ3904)
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
IC = 100 µA, VCE = 5.0 V,
RS =1.0k, f=10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS (except MMPQ3904)
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
VCC = 3.0 V, VBE = 0.5 V,
IC = 10 mA, IB1 = 1.0 mA
VCC = 3.0 V, IC = 10mA
IB1 = IB2 = 1.0 mA
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
300
50
50
300
0.2
0.3
0.85
0.95
4.0
8.0
5.0
35
35
200
50
V
V
V
nA
nA
V
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)


Part Number MMBT3904
Description NPN General Purpose Amplifier
Maker National Semiconductor
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MMBT3904 Datasheet PDF






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