GaNFast™ Power IC
* Monolithically-integrated gate drive
* Wide VCC range (10 to 30 V)
* Programmable turn-on dV/dt
* 200 V/ns dV/dt immunity
* 800 V .

* AC-DC, DC-DC, DC-AC
* QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D
*.

This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense™ technology is also integrated which enables real-time, accurate sensing of .

NV6154

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