GaNFast™ Power IC
* Monolithically-integrated gate drive
* Wide VCC range (10 to 30 V)
* Programmable turn-on dV/dt
* 200 V/ns dV/dt immunity
* 800 V .

* AC-DC, DC-DC, DC-AC
* High frequency operation up to 2 MHz
* QR flyback, Class D, PFC
* Wireless power.

This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense™ technology is also integrated which enables real-time, accurate sensing of .

NV6132A

NV6133C

NV6134A

NV6135C

NV6136A

NV6136C

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NV6125

NV6127