Description
This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation.
Features
- GaNFast™ Power IC.
- Monolithically-integrated gate drive.
- Wide VCC range (10 to 30 V).
- Programmable turn-on dV/dt.
- 200 V/ns dV/dt immunity.
- 800 V Transient Voltage Rating.
- 700 V Continuous Voltage Rating.
- Low 520 mΩ resistance.
- Zero reverse recovery charge.
- 2 MHz operation GaNSense™ Technology.
- Integrated loss-less current sensing.
- Short-circuit protection.
- Over-temperature protection.
NV6132C Datasheet
