Description
1..
This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficie.
Features
* GaNFast™ Power IC
* Monolithically-integrated gate drive
* Wide VCC range (10 to 30 V)
* Programmable turn-on dV/dt
* 200 V/ns dV/dt immunity
* 800 V Transient Voltage Rating
* 700 V Continuous Voltage Rating
* Low 210 mΩ resistance
* Z
Applications
* AC-DC, DC-DC, DC-AC
* QR Flyback, PFC, Class D
* Wireless power, Solar Micro-inverters
* LED lighting, TV SMPS, Server, Telecom
4. Typical Application Circuits
Loss-less Current Sensing
Final Datasheet
NV6135C
GaNFast™ Power IC
with GaNSense™ Technology
QFN 6 x 8
