NV6169 ic equivalent, power ic.
GaNFast™ Power IC
* Monolithically-integrated gate drive
* Wide VCC range (9 to 30 V)
* Programmable turn-on dV/dt
* 200 V/ns dV/dt immunity
* 800 V T.
* AC-DC, DC-DC
* ACF, Buck, Boost, Half Bridge, Full Bridge, LLC resonant,
Class D, PFC, Motor Drive
* TV SM.
This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense™ technology is also integrated which enables real-time, accurate sensing of .
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