n-channel power mosfet.
RDS(ON) = 0.45Ω @ VGS = 10V Ultra low gate charge(81nC max.) Low reverse transfer capacitance (C RSS = 11pF typical) Fast switching capability 100% avalanche energy speci.
such as SMPS, UPS, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high spe.
The Nell IRF13N50 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient .
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