NJG1812ME4
NJG1812ME4 is HIGH POWER DPDT SWITCH GaAs MMIC manufactured by New Japan Radio.
DESCRIPTION
The NJG1812ME4 is a Ga As DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications. The NJG1812ME4 features very low insertion loss, low distortion and excellent linearity performance down to 1.8V 1bit control voltage at high frequency up to 3GHz. In addition, this switch is able to handle high power signals.
The NJG1812ME4 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the small & thin EQFN12-E4 package is adopted.
- PACKAGE OUTLINE NJG1812ME4
- APPLICATIONS Antenna swapping, General purpose switching applications
LTE, UMTS, CDMA, GSM systems
- FEATURES
- Low voltage logic control
VCTL(H)=1.35V to 5.0V
- Low voltage operation
VDD=2.7V typ.
- Low insertion loss
0.25d B typ. @f=900MHz, PIN=+35d Bm
0.35d B typ. @f=1900MHz, PIN=+33d Bm
0.45d B typ. @f=2700MHz, PIN=+27d Bm
- Low distortion
2nd harmonics=-89d Bm typ. @ f=786.5MHz, PIN=+23d Bm
3rd harmonics=-89d Bm typ. @ f=710MHz, PIN=+23d Bm
- P-0.1d B
+36 d Bm min.
- Ultra-small and ultra-thin package
EQFN12-E4 (Package size: 2.0 x 2.0 x 0.397 mm typ.)
- Ro HS pliant and Halogen Free, MSL1
- PIN CONFIGURATION (TOP VIEW)
1PIN INDEX GND P3 GND
12 11 10
VDD 1
9 P4
DECODER
GND 2
8 GND
VCTL 3
7 P1
Pin connection
1. VDD
7. P1
2. GND
8. NC(GND)
3. VCTL
9....
