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NJG1812ME4 - HIGH POWER DPDT SWITCH GaAs MMIC

General Description

antenna swapping of LTE/UMTS/CDMA/GSM applications.

Key Features

  • S.
  • Low voltage logic control VCTL(H)=1.35V to 5.0V.
  • Low voltage operation VDD=2.7V typ.
  • Low insertion loss 0.25dB typ. @f=900MHz, PIN=+35dBm 0.35dB typ. @f=1900MHz, PIN=+33dBm 0.45dB typ. @f=2700MHz, PIN=+27dBm.
  • Low distortion 2nd harmonics=-89dBm typ. @ f=786.5MHz, PIN=+23dBm 3rd harmonics=-89dBm typ. @ f=710MHz, PIN=+23dBm.
  • P-0.1dB +36 dBm min.
  • Ultra-small and ultra-thin package EQFN12-E4 (Package size: 2.0 x 2.0 x 0.397 mm typ. ).
  • RoHS compl.

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Full PDF Text Transcription (Reference)

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NJG1812ME4 HIGH POWER DPDT SWITCH GaAs MMIC  GENERAL DESCRIPTION The NJG1812ME4 is a GaAs DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications. The NJG1812ME4 features very low insertion loss, low distortion and excellent linearity performance down to 1.8V 1bit control voltage at high frequency up to 3GHz. In addition, this switch is able to handle high power signals. The NJG1812ME4 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the small & thin EQFN12-E4 package is adopted.