2SB1502 - Silicon PNP Darlington Power Transistor

This page provides the datasheet information for the 2SB1502, a member of the 2SB1502_NewJerseySemi Silicon PNP Darlington Power Transistor family.

Product Overview

New Jersey Semi-Conductor

Part number	2SB1502
Manufacturer	New Jersey Semi-Conductor
File Size	96.73 KB
Description	Silicon PNP Darlington Power Transistor
Datasheet	2SB1502 Datasheet
Additional preview pages of the 2SB1502 datasheet.

High DC Current Gain: hFE= 5000(Min)@lc= -4A Low-Collector Saturation Voltage: VCE(satr -2.5V(Max.)@lc= -4A

PIN 1.BASE 2.

Designed for power amplifier applications O

2SB1502 - Silicon PNP Transistor (Panasonic Semiconductor)
2SB1502 - PNP Transistor (INCHANGE)
2SB1503 - Silicon PNP Transistor (Panasonic Semiconductor)
2SB1503 - SILICON POWER TRANSISTOR (SavantIC)
2SB1503 - PNP Transistor (INCHANGE)
2SB1504 - Silicon PNP epitaxial planar type darlington (Panasonic)
2SB1507 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SB1507 - SILICON POWER TRANSISTOR (SavantIC)
2SB1507 - PNP Transistor (INCHANGE)
2SB1508 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

Other Datasheets by New Jersey Semi-Conductor

Published: Nov 25, 2013 |