• Part: 2SB1503
  • Description: Silicon PNP Darlington Power Transistor
  • Category: Transistor
  • Manufacturer: New Jersey Semi-Conductor
  • Size: 96.37 KB
Download 2SB1503 Datasheet PDF
New Jersey Semi-Conductor
2SB1503
2SB1503 is Silicon PNP Darlington Power Transistor manufactured by New Jersey Semi-Conductor.
- Part of the 2SB1503_NewJerseySemi comparator family.
DESCRIPTION - High DC Current Gain: h FE= 5000(Min)@lc= -7A - Low-Collector Saturation Voltage: Vc E<satr -2.5V(Max.)@lc= -7A - plement to Type 2SD2276 1 2 3 PIN 1.BASE 2. COLLECTOR TO-3PL package APPLICATIONS - Designed for power amplifier applications - Optimum for 11OW Hi Fi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 VCEO Collector-Emitter Voltage -140 VEBO Emitter-Base Voltage -5 V mm Ic Collector Current-Continuous -7 Collector Current-Peak Collector Power Dissipation @ TC=25°C -12 120 W Collector Power Dissipation @ Ta=25'C Tj Junction...