Datasheet4U Logo Datasheet4U.com

2SB1503 - Silicon PNP Transistor

Key Features

  • q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <.
  • 2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
  • 160.
  • 140.
  • 5.
  • 12.
  • 7 120 3.5 150.
  • 55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 Collector to base voltage Coll.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1503 SILICON POWER TRANSISTOR SavantIC
2SB1503 Silicon PNP Darlington Power Transistor New Jersey Semi-Conductor
2SB1503 PNP Transistor INCHANGE
2SB1502 Silicon PNP Darlington Power Transistor New Jersey Semi-Conductor
2SB1502 PNP Transistor INCHANGE

Other Datasheets by Panasonic

Part Number Description
2SB1502 Silicon PNP Transistor
2SB1537 Silicon PNP epitaxial planer type Transistor
2SB1539 Silicon PNP epitaxial planer type Transistor
2SB1548 Silicon PNP Transistor
2SB1548A Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –160 –140 –5 –12 –7 120 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.