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2SB1503 Datasheet Silicon PNP Darlington Power Transistor

Manufacturer: New Jersey Semi-Conductor

Overview: , One. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

• High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage: VcE

COLLECTOR TO-3PL package APPLICATIONS • Designed for power amplifier applications • Optimum for 11OW HiFi output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V mm Ic Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25°C -12 A 120 W PC Collector Power Dissipation @ Ta=25'C Tj 3.5 Junction Temperature 150 °C DIM A B C D E F G H J K N P MIN MAX 25,50 19.80 4.50 0.90 2,30 2.40 10.80 3.10 0.50 26.50 20 JO 5.50 1.10 JJO 2.60 11.00 S.30 0.70 21.00 4.10 2.60 3.50 2.10 4.10 3.10 20.00 3.90 2.40 3.10 1.90 3.90 2.90 q R Tstg Storage Temperature Range -55-150 °c u w NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.

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