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2SB1503 - Silicon PNP Darlington Power Transistor

Download the 2SB1503 datasheet PDF. This datasheet also covers the 2SB1503_NewJerseySemi variant, as both devices belong to the same silicon pnp darlington power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

High DC Current Gain: hFE= 5000(Min)@lc= -7A Low-Collector Saturation Voltage: VcE

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1503_NewJerseySemi-Conductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB1503
Manufacturer New Jersey Semi-Conductor
File Size 96.37 KB
Description Silicon PNP Darlington Power Transistor
Datasheet download datasheet 2SB1503 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
, One. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB1503 DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage: VcE