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NSD65R280C - N-channel 650V Super Junction MOSFET

General Description

NSD65R280C is a N-channel power MOSFET designed according to super junction technology.

This device has very low on-resistance and hard ruggedness for switching applications.

It’s very low conduction loss and fast switching can make applications more efficient and faster.

Key Features

  • Low gate charge.
  • Low RDS(on) per chip area(Low FOM).
  • Very low switching and conduction loss.
  • Extremely high commutation ruggedness.

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Datasheet Details

Part number NSD65R280C
Manufacturer Nexgen Power
File Size 752.72 KB
Description N-channel 650V Super Junction MOSFET
Datasheet download datasheet NSD65R280C Datasheet

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Full PDF Text Transcription (Reference)

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NSD65R280C N-channel 650V Super Junction MOSFET Description NSD65R280C is a N-channel power MOSFET designed according to super junction technology. This device has very low on-resistance and hard ruggedness for switching applications. It’s very low conduction loss and fast switching can make applications more efficient and faster. Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness Applications • TV and PC Power • Adopter and Lighting • Telecom and UPS(Uninterruptible Power Supply) Key parameters Parameter VDS @ Tj,max Qg,typ ID RDS(on),max Value 700 23 13.8 0.