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FCQ10A03L - SBD

Key Features

  • Similar to TO-220AB Case.
  • Fully Molded Isolation.
  • Dual Diodes.
  • Cathode Common.
  • Extremely Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation.
  • Wire-Bonded technology.

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Full PDF Text Transcription (Reference)

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S B D T y p e : FCQ10A03L FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology OUTLINE DRAWING Maximum Ratings Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Symbol VRRM VRRSM IO IF(RMS) IFSM Tjw Tstg Ftor Approx Net Weight: 1.75g FCQ10A03L 30 35(pulse width ≤ 1µs duty ≤ 1/50) 10 Tc=116°C 50 Hz Full Sine Wave Resistive Load 11.1 120 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.