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P1504EDG - P-Channel Enhancement Mode Field Effect Transistor

Download the P1504EDG datasheet PDF. This datasheet also covers the P1504EDG-Niko variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P1504EDG-Niko-Sem.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P1504EDG
Manufacturer NIKO-SEM
File Size 270.05 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet P1504EDG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P1504EDG TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 15mΩ ID -45A D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range 2 1 SYMBOL VDS VGS LIMITS -40 ±20 -45 -36 -150 -45 102 50 32 UNITS V V TC = 25 °C TC = 70 °C ID IDM IAS A L = 0.1mH Tc = 25 °C Tc = 70 °C EAS PD TJ, Tstg mJ W °C -55 to 150 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1 2 SYMBOL RθJA RθJC TYPICAL MAXIMUM 75 2.