NPT2010
NPT2010 is GaN HEMT manufactured by Nitronex.
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
Built using the SIGANTIC® process
- A proprietary GaN-on-Silicon technology
Features
- Suitable for linear and saturated applications
- Tunable from DC-2.2 GHz
- 48V Operation
- Industry Standard Package
- High Drain Efficiency (>60%)
Applications
- Defense munications
- Land Mobile Radio
- Avionics
- Wireless Infrastructure
- ISM Applications
- VHF/UHF/L-Band Radar
DC-2.2 GHz 100W
GaN HEMT
Product Description
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard...
