Datasheet Details
| Part number | NPT2010 |
|---|---|
| Manufacturer | Nitronex |
| File Size | 2.35 MB |
| Description | GaN HEMT |
| Datasheet | NPT2010-Nitronex.pdf |
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Overview: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon.
| Part number | NPT2010 |
|---|---|
| Manufacturer | Nitronex |
| File Size | 2.35 MB |
| Description | GaN HEMT |
| Datasheet | NPT2010-Nitronex.pdf |
|
|
|
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation.
This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange.
RF Specifications (CW, 2.15 GHz): VDS = 48V, IDQ = 600mA, TC= 25°C Symbol Parameter Min GSS Small-signal Gain - PSAT Saturated Output Power - SAT Efficiency at Saturated Output Power GP Gain at POUT = 95W Drain Efficiency at POUT = 95W 13.5 52.5 VDS Drain Voltage - Ruggedness: Output Mismatch, all phase angles Typ Max 17 - Units dB 50.5 - dBm 64 - % 15 - dB 61 - % 48 - V VSWR = 10:1, No Device Damage Page 1 NDS-034 Rev.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
NPT2010 | GaN on Silicon General Purpose Amplifier | MACOM |
| Part Number | Description |
|---|---|
| NPT2018 | GaN HEMT |
| NPT2019 | GaN HEMT |