MACOM Technology Solutions NPT2010
The NPT2010 is a GaN HEMT general purpose amplifier optimized for DC - 2.2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT2010 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.| Part No. | NPT2010 |
|---|---|
| Datasheet | NPT2010 Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | GaN on Silicon General Purpose Amplifier |
| Buy | Stock & Price |
FEATURES
● GaN on Si HEMT D-Mode Amplifier● Suitable for Linear & Saturated
APPLICATIONS
● Tunable from DC - 2.2 GHz● 48 V Operation
● 15 dB Gain @ 2.15 GHz
● 61% Drain Efficiency @ 2.15 GHz
● 100% RF Tested
● Industry Standard Metal-Ceramic Package
● RoHS* Compliant
DESCRIPTION
Ordering Information Part Number NPT2010 NPT2010-SMBPPR Package bulk quantity sample Functional Schematic Rev. V3 RFIN / VG RFOUT / VD Pin Configuration Pin # Pin Name Function 1 RFIN / VG RF Input / Gate 2 RFOUT / VD RF Output / Drain 3 Flange1 Ground / Source 1. The Flange must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: DC-0006484 NPT2010 GaN on Silicon General Purpose Amplifier DC - 2.2 GHz, 48 V, 100 W Rev.
