NPT2010
NPT2010 is GaN on Silicon General Purpose Amplifier manufactured by MACOM Technology Solutions.
Features
- Ga N on Si HEMT D-Mode Amplifier
- Suitable for Linear & Saturated Applications
- Tunable from DC
- 2.2 GHz
- 48 V Operation
- 15 d B Gain @ 2.15 GHz
- 61% Drain Efficiency @ 2.15 GHz
- 100% RF Tested
- Industry Standard Metal-Ceramic Package
- Ro HS- pliant
Description
The NPT2010 is a Ga N HEMT general purpose amplifier optimized for DC
- 2.2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 d Bm) in an industry standard metal-ceramic package with bolt down flange.
The NPT2010 is ideally suited for defense munications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Ordering Information
Part Number NPT2010
NPT2010-SMBPPR
Package bulk quantity sample
Functional Schematic
Rev. V3
RFIN / VG
RFOUT / VD
Pin Configuration
Pin #
Pin Name
Function
RFIN / VG
RF Input / Gate
RFOUT / VD
RF Output / Drain
Flange1
Ground / Source
1. The Flange must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path.
- Restrictions on Hazardous Substances, pliant to current Ro HS EU directive. 1
MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information.
For further information and support please visit: https://.ma./support...
