Nitronex NPT2010
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange.| Part No. | NPT2010 |
|---|---|
| Datasheet | NPT2010 Download |
| Manufacturer | Nitronex |
| Description | GaN HEMT |
| Buy | Stock & Price |
FEATURES
● Suitable for linear and saturated applications● Tunable from DC-2.2 GHz
● 48V Operation
● Industry Standard Package
● High Drain Efficiency (>60%)
APPLICATIONS
● Defense Communications● Land Mobile Radio
● Avionics
● Wireless Infrastructure
● ISM
APPLICATIONS
● VHF/UHF/L-Band Radar DC-2.2 GHz 100W GaN HEMT ProductDESCRIPTION
RF Specifications (CW, 2.15 GHz): VDS = 48V, IDQ = 600mA, TC= 25°C Symbol Parameter Min GSS Small-signal Gain - PSAT Saturated Output Power - SAT Efficiency at Saturated Output Power GP Gain at POUT = 95W Drain Efficiency at POUT = 95W 13.5 52.5 VDS Drain Voltage - Ruggedness: Output Mismatch, all phase angles Typ Max 17 - Units dB 50.5 - dBm 64 - % 15 - dB 61 - % 48 - V VSWR = 10:1, No Device Damage Page 1 NDS-034 Rev. 1, 052413 NPT2010 DC Specifications: TC = 25°C Symbol Parameter Off Characteristics IDLK Drain-Source Leakage Current (VGS=-8V, VDS=160V) IGLK Gate-Source Leakage Current (VGS=-8V, VDS=0V) On Characteristics VT VGSQ RON ID, MAX Ga...
