NPT2010 - GaN HEMT

General Description

The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation.

This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange.

Key Features

Suitable for linear and saturated.

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NPT2010 gan hemt by Nitronex - Datasheet Preview

Datasheet Details

Part number	NPT2010
Manufacturer	Nitronex
File Size	2.35 MB
Description	GaN HEMT
Datasheet	NPT2010 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-2.2 GHz  48V Operation  Industry Standard Package  High Drain Efficiency (>60%) Applications  Defense Communications  Land Mobile Radio  Avionics  Wireless Infrastructure  ISM Applications  VHF/UHF/L-Band Radar DC-2.2 GHz 100W GaN HEMT Product Description The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange. RF Specifications (CW, 2.