NPT2010
NPT2010 is GaN HEMT manufactured by Nitronex.
Features
- Suitable for linear and saturated applications
- Tunable from DC-2.2 GHz
- 48V Operation
- Industry Standard Package
- High Drain Efficiency (>60%)
Applications
- Defense munications
- Land Mobile Radio
- Avionics
- Wireless Infrastructure
- ISM Applications
- VHF/UHF/L-Band Radar
DC-2.2 GHz 100W
Ga N HEMT
Product Description
The NPT2010 Ga N HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 d Bm) in an industry standard metal-ceramic package with a bolt down flange.
RF Specifications (CW, 2.15 GHz): VDS = 48V, IDQ = 600m A, TC= 25°C
Symbol Parameter
Min
GSS Small-signal Gain
- PSAT
Saturated Output Power
- SAT Efficiency at Saturated Output Power GP Gain at POUT = 95W Drain Efficiency at POUT = 95W
13.5 52.5
VDS Drain Voltage
- Ruggedness: Output Mismatch, all phase angles
Typ Max 17
- Units d B
- d Bm
- %
- d B
- %
- V
VSWR = 10:1, No Device...
