M58BW016DT, M58BW016DB - 16 Mbit 3V supply Flash memories

Numonyx

Datasheet Details

Part number	M58BW016DT, M58BW016DB
Manufacturer	Numonyx
File Size	0.97 MB
Description	16 Mbit 3V supply Flash memories
Datasheet	M58BW016DB-Numonyx.pdf
Note	This datasheet PDF includes multiple part numbers: M58BW016DT, M58BW016DB. Please refer to the document for exact specifications by model.

Supply voltage.
VDD = 2.7 V to 3.6 V for program, erase and read.
VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers.
VPP = 12 V for fast program (optional) High performance.
Access times: 70, 80 ns.
56 MHz effective zero wait-state burst read.
Synchronous burst read.
Asynchronous page read Hardware block protection.
WP pin for write protect of the 2 outermost parameter blocks and all main blocks.
RP pin for write prote.

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Published: Jan 11, 2018 |