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M58BW016DT - 16 Mbit 3V supply Flash memories

Download the M58BW016DT datasheet PDF. This datasheet also covers the M58BW016DB variant, as both devices belong to the same 16 mbit 3v supply flash memories family and are provided as variant models within a single manufacturer datasheet.

Features

  • Supply voltage.
  • VDD = 2.7 V to 3.6 V for program, erase and read.
  • VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers.
  • VPP = 12 V for fast program (optional) High performance.
  • Access times: 70, 80 ns.
  • 56 MHz effective zero wait-state burst read.
  • Synchronous burst read.
  • Asynchronous page read Hardware block protection.
  • WP pin for write protect of the 2 outermost parameter blocks and all main blocks.
  • RP pin for write prote.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M58BW016DB-Numonyx.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number M58BW016DT
Manufacturer Numonyx
File Size 0.97 MB
Description 16 Mbit 3V supply Flash memories
Datasheet download datasheet M58BW016DT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M58BW016DT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics
M58BW016DB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics
M58BW016BB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics
M58BW016BT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics
M58BW032BB 32 Mbit 3.3V Supply Flash Memory STMicroelectronics

Other Datasheets by Numonyx

Part Number Description
M58BW016DB 16 Mbit 3V supply Flash memories
M58BW016FB 16 Mbit 3V supply Flash memories
M58BW016FT 16 Mbit 3V supply Flash memories
M58LR128KB (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58LR128KT (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories

Full PDF Text Transcription

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M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.
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