M58BW016FB Features
* Supply voltage
* VDD = 2.7 V to 3.6 V for program, erase and read
* VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers
* VPP = 12 V for fast program (optional) High performance
* Access times: 70, 80 ns
* 56 MHz effective zero wait-state burst read
* Synch
Datasheet Details
M58BW016FB, M58BW016DB
Numonyx
0.97 MB
16 mbit 3v supply flash memories.
This datasheet PDF includes multiple part numbers: M58BW016FB, M58BW016DB.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
M58BW016FT 16 Mbit 3V supply Flash memories (Numonyx)
M58BW016BB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories (ST Microelectronics)
M58BW016BT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories (ST Microelectronics)
M58BW016DB 16 Mbit 3V supply Flash memories (Numonyx)
M58BW016DB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories (ST Microelectronics)
M58BW016DT 16 Mbit 3V supply Flash memories (Numonyx)
M58BW016DT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories (ST Microelectronics)
M58BW032BB 32 Mbit 3.3V Supply Flash Memory (STMicroelectronics)
M58BW016FB Distributor
