M58BW016FT Key Features
- VDD = 2.7 V to 3.6 V for program, erase
- VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O
- VPP = 12 V for fast program (optional) High performance
- Access times: 70, 80 ns
- 56 MHz effective zero wait-state burst read
- Synchronous burst read
- Asynchronous page read
- WP pin for write protect of the 2 outermost
- RP pin for write protect of all blocks
- Fast program / erase suspend latency
