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M58LR256KT - (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories

Description

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Features

  • Supply voltage.
  • VDD = 1.7 V to 2.0 V for program, erase and read.
  • VDDQ = 1.7 V to 2.0 V for I/O buffers.
  • VPP = 9 V for fast program Synchronous/asynchronous read.
  • Synchronous burst read mode: 54 MHz, 66 MHz.
  • Asynchronous page read mode.
  • Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time.
  • 2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization.
  • Multipl.

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Datasheet Details

Part number M58LR256KT
Manufacturer Numonyx
File Size 2.03 MB
Description (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
Datasheet download datasheet M58LR256KT Datasheet
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Full PDF Text Transcription

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M58LR128KT M58LR128KB M58LR256KT M58LR256KB 128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories Preliminary Data Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 54 MHz, 66 MHz – Asynchronous page read mode – Random access: 70 ns, 85 ns Synchronous burst read suspend Programming time – 2.
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