MJ11029 transistors equivalent, complementary silicon darlington power transistors.
* High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
* Curves to 100 A (Pulsed)
* Diode Protection to Rated IC
* Monolith.
Features
* High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
* Curves to 100 .
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