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Axial Lead Rectifiers
SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
1N5817, 1N5818, 1N5819
This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
• Extremely Low VF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded • Weight: 0.
1N5817 Datasheet
