| Part Number | 1N5817 Datasheet |
|---|---|
| Manufacturer | Won-Top Electronics |
| Overview |
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WON-TOP ELECTRONICS
Features
Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 25A Peak Low Power Loss, High Efficiency Ideally Suited for Use in H.
* Schottky Barrier Chip * Guard Ring for Transient and ESD Protection * Surge Overload Rating to 25A Peak * Low Power Loss, High Efficiency * Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes Mechanical Data * Case: DO-41, Molded Plastic * Terminals: Plated Leads S. |
1N5817 Datasheet and Specifications PDF
The 1N5817 is a 1.0A SCHOTTKY BARRIER DIODE.
| Part Number | 1N5817 Datasheet |
|---|---|
| Description | SCHOTTKY RECTIFIER |
| Manufacturer | International Rectifier |
| Overview | Features The 1N5817 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-. The 1N5817 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Low profile, axial leaded outline High purity, high temperat. |
| Part Number | 1N5817 Datasheet |
|---|---|
| Description | Schottky barrier diodes |
| Manufacturer | NXP Semiconductors |
| Overview |
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.
(1) Implote.
* Low switching losses * Fast recovery time * Guard ring protected * Hermetically sealed leaded glass package. APPLICATIONS * Low power, switched-mode power supplies * Rectifying * Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N5819 DESCRIPTION The 1N5817 to 1N5819 types are Schottky ba. |
| Part Number | 1N5817 Datasheet |
|---|---|
| Description | SCHOTTKY BARRIER RECTIFIER |
| Manufacturer | onsemi |
| Overview |
Axial Lead Rectifiers
SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
1N5817, 1N5818, 1N5819
This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode..
chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low *voltage, high *frequency inverters, free wheeling diodes, and polarity protection diodes. Features * Extremely Low VF * Low Stored Charge, Majority Carrier Conduc. |