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25N60N Datasheet

N-Channel MOSFET

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MOSFET – N-Channel,
SUPREMOS
600 V, 25 A, 126 mW
FCH25N60N
Description
The SUPREMOS® MOSFET is ON Semiconductor’s next
generation of high voltage superjunction (SJ) technology employing
a deep trench filling process that differentiates it from the
conventional SJ MOSFETs. This advanced technology and precise
process control provides lowest Rsp onresistance, superior switching
performance and ruggedness. SUPREMOS MOSFET is suitable for
high frequency switching power converter applications such as PFC,
server/telecom power, FPD TV power, ATX power, and industrial
power applications.
Features
RDS(on) = 108 mW (Typ.) @ VGS = 10 V, ID = 12.5 A
Ultra Low Gate Charge (Typ. Qg = 57 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)
100% Avalanche Tested
This Device is PbFree and is RoHS Compliant
Applications
Solar Inverter
ACDC Power Supply
www.onsemi.com
VDS
600 V
RDS(ON) MAX
126 mW @ 10 V
ID MAX
25 A
D
G
S
N-CHANNEL MOSFET
G
DS
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FCH
25N60N
© Semiconductor Components Industries, LLC, 2011
August, 2020 Rev. 3
$Y
&Z
&3
&K
FCH25N60N
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCH25N60N/D


  ON Semiconductor Electronic Components Datasheet  

25N60N Datasheet

N-Channel MOSFET

No Preview Available !

FCH25N60N
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Continuous (TC = 25°C)
Continuous (TC = 100°C)
Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
600
V
±30
V
25
A
16
75
A
861
mJ
8.3
A
2.2
mJ
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate above 25°C
216
W
1.72
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to + 150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 Second
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. IAS = 8.3 A, RG = 25 W, starting TJ = 25 °C
3. ISD 25 A, di/dt 200 A/s, VDD 380 V, starting TJ = 25 °C
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
FCH25N60N
FCH25N60N
TO2473LD
Package Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
0.58
40
Unit
°C/W
www.onsemi.com
2


Part Number 25N60N
Description N-Channel MOSFET
Maker ON Semiconductor
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25N60N Datasheet PDF






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