FCH25N60N
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
− Continuous (TC = 25°C)
− Continuous (TC = 100°C)
− Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
600
V
±30
V
25
A
16
75
A
861
mJ
8.3
A
2.2
mJ
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
− Derate above 25°C
216
W
1.72
W/°C
TJ, TSTG Operating and Storage Temperature Range
−55 to + 150
°C
TL
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Second
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. IAS = 8.3 A, RG = 25 W, starting TJ = 25 °C
3. ISD ≤ 25 A, di/dt ≤ 200 A/s, VDD ≤ 380 V, starting TJ = 25 °C
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
FCH25N60N
FCH25N60N
TO−247−3LD
Package Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 Units
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
0.58
40
Unit
°C/W
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