25N60N
Overview
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
- RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A
- Ultra Low Gate Charge (Typ. Qg = 57 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)
- 100% Avalanche Tested
- RoHS Compliant
