25N60N Datasheet | Fairchild Semiconductor

FCH25N60N - N-Channel SupreMOS® MOSFET December 2013 FCH25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 126 mΩ Features - RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A - Ultra Low Gate Charge (Typ. Qg = 57 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) - 100% Avalanche Tested - RoHS pliant Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is...