25N60N - FCH25N60N

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	25N60N
Manufacturer	Fairchild Semiconductor
File Size	603.21 KB
Description	FCH25N60N
Datasheet	25N60N Datasheet
Additional preview pages of the 25N60N datasheet.

Product details

Description

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.

Features

RDS(on) = 108 mΩ (Typ. ) @ VGS = 10 V, ID = 12.5 A.
Ultra Low Gate Charge (Typ. Qg = 57 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 262 pF).
100% Avalanche Tested.
RoHS Compliant.

📁 Similar Datasheet

25N60N - N-Channel MOSFET (ON Semiconductor)
25N60 - N-Channel MOSFET (Inchange Semiconductor)
25N621K - Metal Oxide Varistor (HUAAN)
25N681K - Metal Oxide Varistor (HUAAN)
25N01GVSFIG - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
25N01GVSFIT - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
25N01GVTBIG - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
25N01GVTBIT - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)

Other Datasheets by Fairchild Semiconductor

Published: Feb 23, 2014 |