Part Number	25N60N Datasheet
Manufacturer	Fairchild Semiconductor
Overview	The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ. * RDS(on) = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A * Ultra Low Gate Charge (Typ. Qg = 57 nC) * Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF) * 100% Avalanche Tested * RoHS Compliant Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-ju.