25N60N Datasheet (onsemi)

Overview

• RDS(on) = 108 mW (Typ.) @ VGS = 10 V, ID = 12.5 A
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)
• 100% Avalanche Tested
• This Device is Pb-Free and is RoHS Compliant