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  ON Semiconductor Electronic Components Datasheet  

2N2905A Datasheet

Small Signal Switching Transistor

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2N2905A
Small Signal Switching
Transistor
PNP Silicon
Features
MILPRF19500/290 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction
Temperature Range
Symbol Value
VCEO
60
VCBO
60
VEBO
IC
5.0
600
PT 800
PT 3.0
TJ, Tstg 65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
195 °C/W
Thermal Resistance, JunctiontoCase
RqJC
50 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO39
CASE 205AB
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N2905A
JANTX2N2905A
TO39
Bulk
JANTXV2N2905A
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 2
1
Publication Order Number:
2N2905A/D


  ON Semiconductor Electronic Components Datasheet  

2N2905A Datasheet

Small Signal Switching Transistor

No Preview Available !

2N2905A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc)
CollectorEmitter Cutoff Current
(VCE = 60 Vdc)
CollectorBase Cutoff Current
(VCB = 50 Vdc)
(VCB = 60 Vdc)
EmitterBase Cutoff Current
(VEB = 5.0 Vdc)
(VEB = 3.5 Vdc)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALLSIGNAL CHARACTERISTICS
Magnitude of Small Signal Current Gain
(IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
Input Capacitance (VEB = 2.0 Vdc, IC = 0, 100 kHz f 1.0 MHz)
SWITCHING CHARACTERISTICS
TurnOn Time
(Reference Figure in MILPRF19500/290)
TurnOff Time
(Reference Figure in MILPRF19500/290)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
Min
V(BR)CEO
ICES
ICBO
IEBO
60
hFE
VCE(sat)
VBE(sat)
75
100
100
100
50
|hfe|
hfe
Cobo
Cibo
ton
toff
2.0
100
Max Unit
Vdc
mAdc
1.0
10 nAdc
10 mAdc
10 mAdc
50 nAdc
450
300
Vdc
0.4
1.6
Vdc
1.3
2.6
8.0 pF
30 pF
45 ns
300 ns
http://onsemi.com
2


Part Number 2N2905A
Description Small Signal Switching Transistor
Maker ON Semiconductor
Total Page 3 Pages
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