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2N4123, 2N4124
General Purpose Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage
Symbol Value
Unit
VCEO
Vdc
2N4123
30
2N4124
25
Collector−Base Voltage
VCBO
Vdc
2N4123
40
2N4124
30
Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
5.0
Vdc
200
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.
2N4123 Datasheet
