2N4410
2N4410 is Amplifier Transistor manufactured by onsemi.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N4410/D
Amplifier Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
1 2 3
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 120 5.0 250 625 5.0 1.5 12
- 55 to +150 Unit Vdc Vdc Vdc m Adc m W m W/°C Watts m W/°C °C CASE 29- 04, STYLE 1 TO- 92 (TO- 226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector
- Emitter Breakdown Voltage(1) (IC = 1.0 m Adc, IB = 0) Collector
- Emitter Breakdown Voltage (IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector
- Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter
- Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. V(BR)CEO V(BR)CEX V(BR)CBO V(BR)EBO ICBO
- - IEBO
- 0.01 1.0 0.1 µAdc 80 120 120 5.0
- -
- - Vdc Vdc Vdc Vdc µAdc
REV 1
Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc....
