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　 ON Semiconductor Electronic Components Datasheet 　

2N5195 Datasheet

Silicon PNP Power Transistors(4 AMPERE)

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ON Semiconductor)
Silicon PNP Power Transistors
2N5194
2N5195*
. . . for use in power amplifier and switching circuits, — excellent
safe area limits. Complement to NPN 2N5191, 2N5192
*ON Semiconductor Preferred Device
4 AMPERE
POWER TRANSISTORS
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
2N5194 2N5195
60 80
60 80
5.0
4.0
1.0
40
320
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
_C/W
Symbol
θJC
Max Unit
3.12 _C/W
SILICON PNP
60–80 VOLTS
321
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
CASE 77–09
TO–225AA TYPE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
VCEO(sus)
Vdc
2N5194
60 —
2N5195
80 —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, IB = 0)
2N5194
2N5195
ICEO
mAdc
— 1.0
— 1.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N5194
2N5195
2N5194
2N5195
ICEX
mAdc
— 0.1
— 0.1
— 2.0
— 2.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.
2N5194
2N5195
ICBO
IEBO
mAdc
— 0.1
— 0.1
— 1.0 mAdc
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1
Publication Order Number:
2N5194/D
　 ON Semiconductor Electronic Components Datasheet 　

2N5195 Datasheet

Silicon PNP Power Transistors(4 AMPERE)

No Preview Available !

2N5194 2N5195
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5194
2N5195
2N5194
2N5195
hFE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, IB = 0.15 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =4.0Adc,IB =1.0Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain — Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
VCE(sat)
VBE(on)
fT
Min
25
20
10
7.0
—
—
—
2.0
Max Unit
—
100
80
—
—
Vdc
0.6
1.4
1.2 Vdc
— MHz
*Indicates JEDEC Registered Data.
(2) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.004
TJ = 150°C
0.007 0.01
25°C
0.02
-ā55°C
0.03 0.05
0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
0.5
1.0
VCE = 2.0 V
VCE = 10 V
2.0 3.0 4.0
2.0
1.6
1.2 IC = 10 mA
0.8
0.4
100 mA
TJ = 25°C
1.0 A 3.0 A
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30
Figure 2. Collector Saturation Region
50 70 100
200 300 500
http://onsemi.com
2


Part Number 2N5195
Description Silicon PNP Power Transistors(4 AMPERE)
Maker ON Semiconductor
Total Page 8 Pages
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