Datasheet Details
| Part number | 2N5195 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 194.24 KB |
| Description | Bipolar Transistor |
| Datasheet | 2N5195-Multicomp.pdf |
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Overview: Bipolar Transistor NPN Collector 3 2 Base 1 Emitter.
| Part number | 2N5195 |
|---|---|
| Manufacturer | Multicomp |
| File Size | 194.24 KB |
| Description | Bipolar Transistor |
| Datasheet | 2N5195-Multicomp.pdf |
|
|
|
: Silicon TO-126, PNP Power Transistor for use in power amplifier and switching excellent safe area limits Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO lC IB PD TJ Tstg Rating 80 5 4 1 40 320 -65 to +150 Unit V A W mW/°C °C www.element14.com www.farnell.com www.newark.com Page <1> 29/04/13 V1.0 Bipolar Transistor Electrical Characteristics (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics V(BR)CEO ICEO ICEX ICBO IEBO IC = 100mA, IB = 0 (Note 1) VCE = 80V, IE = 0 VCE = 80VEB(off), IE = 1.5V VCB = 80V, IE = 0 VEB = 5V, IC = 0 DC Current Gain (Note 1) hFE Collector - Emitter Saturation Voltage (Note 1) Base - Emitter on Voltage (Note 1) Small Signal Characteristics VCE(sat) VBE(on) VCE = 2V, IC = 1.5A VCE = 2V, IC = 4A IC = 1.5A, IB = .15mA IC = 4A, IB = 1A IC = 1.5A, VCE = 2V Current Gain-Bandwidth Product fT VCE = 10V, IC = 1A, f = 1MHz Note 1 : Pulse Test : Pulse Width % 300µs, Duty Cycle % 2% Min.
Max.
Unit 80 - V 1 - 0.1 mA 1 20 80 - 7 - 0.6 - 1.4 V 1.2 2 - MHz Dimensions Min.
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