
	ON Semiconductor Electronic Components Datasheet

2N5195G Datasheet

Silicon PNP Power Transistors

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2N5194G, 2N5195G

Silicon PNP Power

Transistors

These devices are designed for use in power amplifier and switching

circuits; excellent safe area limits.

Features

• Complement to NPN 2N5191, 2N5192

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N5194G

2N5195G

VCEO

Vdc

Collector−Base Voltage

2N5194G

2N5195G

VCB Vdc

Emitter−Base Voltage

Collector Current

Base Current

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

VEB 5.0 Vdc

IC 4.0 Adc

IB 1.0 Adc

40 W

320 W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg – 65 to +150 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Indicates JEDEC registered data.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case

Symbol

RqJC

Max

3.12

Unit

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

December, 2013 − Rev. 15

http://onsemi.com

4 AMPERE

POWER TRANSISTORS

PNP SILICON

60 − 80 VOLTS

COLLECTOR

2, 4

BASE

EMITTER

123

TO−225

CASE 77−09

STYLE 1

MARKING DIAGRAM

YWW

N519xG

2N519x

= Year

= Work Week

= Device Code

x = 4 or 5

= Pb−Free Package

ORDERING INFORMATION

Device

Package

Shipping

2N5194G

TO−225

(Pb−Free)

500 Units / Bulk

2N5195G

TO−225

(Pb−Free)

500 Units / Bulk

Publication Order Number:

2N5194/D


	ON Semiconductor Electronic Components Datasheet

2N5195G Datasheet

Silicon PNP Power Transistors

No Preview Available !

2N5194G, 2N5195G

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 0.1 Adc, IB = 0)

2N5194G

2N5195G

VCEO(sus)

Vdc

−

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

2N5194G

(VCE = 80 Vdc, IB = 0)

2N5195G

ICEO

−

mAdc

1.0

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)

2N5194G

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

2N5195G

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

2N5194G

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

2N5195G

ICEX

mAdc

− −0.1

− 0.1

− 2.0

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)

2N5194G

(VCB = 80 Vdc, IE = 0)

2N5195G

ICBO

−

mAdc

0.1

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

mAdc

1.0

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 1.5 Adc, VCE = 2.0 Vdc)

2N5194G

2N5195G

(IC = 4.0 Adc, VCE = 2.0 Vdc)

2N5194G

2N5195G

hFE

25 100

20 80

10 −

7.0 −

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 1.5 Adc, IB = 0.15 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc)

VCE(sat)

−

Vdc

0.6

1.4

Base−Emitter On Voltage (Note 3)

(IC = 1.5 Adc, VCE = 2.0 Vdc)

VBE(on)

−

Vdc

1.2

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT MHz

2.0 −

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Indicates JEDEC registered data.

3. Pulse Test: Pulse Width ≤ 300Ăms, Duty Cycle ≤Ă2.0%.

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2N5195G Datasheet

Silicon PNP Power Transistors

2N5195G Datasheet

Silicon PNP Power Transistors

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