2N5462 Datasheet | onsemi

.. 2N5460, 2N5461, 2N5462 JFET Amplifier P- Channel - Depletion Features - Pb- Free Packages are Available- MAXIMUM RATINGS Rating Drain - Gate Voltage Reverse Gate - Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 - 65 to +135 - 65 to +150 Unit Vdc Vdc m Adc m W m W/°C °C °C http://onsemi. 2 DRAIN 3 GATE 1 SOURCE Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 12 3 TO- 92 CASE 29 STYLE 7 MARKING DIAGRAM 2N 546x AYWWG G 2N546x = Device Code x = 0, 1, or 2 A = Assembly Location Y = Year WW = Work Week G = Pb- Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are remended choices for future use and best overall value. - For additional information on our Pb- Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor ponents Industries, LLC, 2006 March, 2006 - Rev. 5 Publication Order Number: 2N5460/D 2N5460, 2N5461, 2N5462 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS...