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2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector − Emitter Voltage
Symbol
2N5550 2N5551
VCEO
Value
140 160
Unit Vdc
Collector − Base Voltage
VCBO
Vdc
2N5550
160
2N5551
180
Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
6.0
Vdc
600
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5
W
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.
2N5550 Datasheet
