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  ON Semiconductor Electronic Components Datasheet  

2N5551BU Datasheet

NPN Amplifier

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March March 20188
2N5551 / MMBT5551
NPN General-Purpose Amplifier
Description
This device is designed for general-purpose high-voltage
amplifiers and gas discharge display drivers.
2N5551
MMBT5551
3
TO-92
2
1 SOT-23
Marking: 3S
1. Base 2. Emitter 3. Collector
Ordering Information(1)
Part Number
2N5551TA
2N5551TFR
2N5551TF
2N5551BU
MMBT5551
Top Mark
5551
5551
5551
5551
3S
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
Note:
1. Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition: IC = 10 mA, VCE = 5.0 V)
Packing Method
Ammo
Tape and Reel
Tape and Reel
Bulk
Tape and Reel
© 2009 Semiconductor Components Industries, LLC.,
2N5551 / MMBT5551 Rev. 2
1
www.onsemi.com


  ON Semiconductor Electronic Components Datasheet  

2N5551BU Datasheet

NPN Amplifier

No Preview Available !

Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
VCEO Collector-Emitter Voltage
160
V
VCBO Collector-Base Voltage
180
V
VEBO Emitter-Base Voltage
6
V
IC
Collector current - Continuous
600
mA
TJ, Tstg(3) Junction and Storage Temperature
-55 to +150
°C
Notes:
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3. These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty cycle operations.
Thermal Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJC
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum
2N5551
MMBT5551
625
350
5.0
2.8
83.3
200
357
Units
mW
mW/°C
°C/W
°C/W
Note:
4. PCB board size FR-4 76 x 114 x 0.6 T mm3 (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size.
© 2009 Semiconductor Components Industries, LLC.
2N5551 / MMBT5551 Rev. 2
2
www.onsemi.com


Part Number 2N5551BU
Description NPN Amplifier
Maker ON Semiconductor
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2N5551BU Datasheet PDF






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