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2N5551 Datasheet PDF

Multicomp 2N5551

This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it.
Part No. 2N5551
Datasheet 2N5551 Download
Manufacturer
Multicomp
Description Bipolar Transistor
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2N5551 datasheet page 1 preview

MAXIMUM RATINGS

: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation (TA = +25°C), Derate above 25°C Total Device Dissipation(TC = +25°C), Derate above 25°C Operating Junction Temperature, Range Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note-1) Symbol VCBO VCEO VEBO IC PD TJ Tstg RthJC Note: 1. RthJA is measured with the device soldered into a typical printed circuit board. Rating 180 160 6 600 625 5 1.5 12 -55 to +150 83.3 200 Page <1> Unit V A mW mW/°C W mW/°C °C °C/W 23/04/13 V1.0 Bipolar Transistor

ELECTRICAL CHARACTERISTICS

: (TA = +25°C Unless otherwise specified) Parameter Symbol Test Conditions Min Max Unit OFF Characteristics Collector - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut - Off Current ICBO Emitter Cut - Off Voltage IEBO ON Cha...
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