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2N5551 - NPN Transistor

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Description

SYMBOL VALUE Collector -Emitter Voltage VCEO 160 Collector -Base Voltage VCBO 180 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 600 Power Dissipation @Ta=25 degC PD 625 Derate Above 25 deg C 5.0 Power Dissipation @Tc=25 degC PD 1.5 Derate Above 25 deg C 12 O

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Datasheet Details

Part number 2N5551
Manufacturer CDIL
File Size 103.73 KB
Description NPN Transistor
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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" EBC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE Collector -Emitter Voltage VCEO 160 Collector -Base Voltage VCBO 180 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 600 Power Dissipation @Ta=25 degC PD 625 Derate Above 25 deg C 5.0 Power Dissipation @Tc=25 degC PD 1.
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