2N5551 Datasheet PDF | Continental Device India

Continental Device India 2N5551

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.

Part No.	2N5551
Datasheet	2N5551 Download
Manufacturer	Continental Device India
Description	NPN Transistor
Buy	Stock & Price

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL VALUE Collector -Emitter Voltage VCEO 160 Collector -Base Voltage VCBO 180 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 600 Power Dissipation @Ta=25 degC PD 625 Derate Above 25 deg C 5.0 Power Dissipation @Tc=25 degC PD 1.5 Derate Above 25 deg C 12 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 125 Junction to Ambient Rth(j-a) (1) 357 (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board

ELECTRICAL CHARACTERISTICS

(Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION MIN Collector -Emitter Voltage VCEO IC=1mA,IB=0 160 Collector -Base Voltage VCBO IC=100uA.IE=0 180 Emitter -Base Voltage VEBO IE=10uA, IC=-0 6.0 Collector-Cut off Current ICBO VCB=160V, IE=0 - TYP - UNIT V V V mA mW mw/deg C W mw/deg C deg C deg C/W deg C/W MAX 50 UNIT V V V nA Emitter-Cu...

2N5551 Datasheets by Manufacturer

5 datasheets

Part Number	Manufacturer
2N5551	Motorola
2N5551	Fairchild Semiconductor
2N5551	onsemi
2N5551	Multicomp
2N5551	Inchange Semiconductor