2N5550S
FEATURES
High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100n A(Max.) VCB=100V Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50m A, IB=5m A Low Noise : NF=10d B (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC 600
Base Current
IB 100
Collector Power Dissipation
- 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note :
- Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT V V V m A m A m W
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
23 1
M 1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D E G H J K L M N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10...
