2N5550S - EPITAXIAL PLANAR NPN TRANSISTOR

KEC

Key Features

High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100nA(Max. ) VCB=100V Low Saturation Voltage : VCE(sat)=0.25V(Max. ) IC=50mA, IB=5mA Low Noise : NF=10dB (Max. ).

2N5550S epitaxial planar npn transistor by KEC - Datasheet Preview

Datasheet Details

Part number	2N5550S
Manufacturer	KEC
File Size	31.54 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	2N5550S Datasheet

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Other Datasheets by KEC

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2N5550	EPITAXIAL PLANAR NPN TRANSISTOR
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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V Low Leakage Current. : ICBO=100nA(Max.) VCB=100V Low Saturation Voltage : VCE(sat)=0.25V(Max.) IC=50mA, IB=5mA Low Noise : NF=10dB (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 160 Collector-Emitter Voltage VCEO 140 Emitter-Base Voltage VEBO 6 Collector Current IC 600 Base Current IB 100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V V mA mA mW A G H D 2N5550S EPITAXIAL PLANAR NPN TRANSISTOR E L BL 23 1 PP M 1. EMITTER 2. BASE 3.