2N5551
FEATURES
High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50n A(Max.), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.), IC=50m A, IB=5m A Low Noise : NF=8d B (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IB PC Tj Tstg
RATING 180 160 6 600 100 625 150
-55 150
UNIT V V V m A m A m W
EPITAXIAL PLANAR NPN TRANSISTOR
KE G
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
1997. 5. 2
Revision No : 0
1/2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown...
