Datasheet4U.com

2N5551 - NPN TRANSISTOR

Product Overview

KEC

📥 Download Datasheet

2N5551 NPN TRANSISTOR by KEC - Datasheet Preview — Datasheet preview – 2N5551

Datasheet Details

Part number	2N5551
Manufacturer	KEC
File Size	30.17 KB
Description	NPN TRANSISTOR
Datasheet	2N5551 Datasheet
Additional preview pages of the 2N5551 datasheet.

Product details

Features

High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max. ), VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max. ), IC=50mA, IB=5mA Low Noise : NF=8dB (Max. ).

📁 Similar Datasheet

2N5551BU - NPN Amplifier (ON Semiconductor)
2N5551HR - Hi-Rel NPN bipolar transistor (STMicroelectronics)
2N5551TA - NPN Amplifier (ON Semiconductor)
2N5551TF - NPN Amplifier (ON Semiconductor)
2N555 - PNP germanium power transistors (Motorola)
2N5550 - Amplifier Transistor (ON Semiconductor)
2N5552 - NPN Transistor (SSDI)
2N5555 - N-Channel JFET (Motorola Inc)

Other Datasheets by KEC

2N5551C - EPITAXIAL PLANAR NPN TRANSISTOR
2N5551S - EPITAXIAL PLANAR NPN TRANSISTOR
2N5551SC - EPITAXIAL PLANAR NPN TRANSISTOR
2N5550S - EPITAXIAL PLANAR NPN TRANSISTOR
2N5401 - EPITAXIAL PLANAR PNP TRANSISTOR
2N5401C - PNP TRANSISTOR

Published: Jun 21, 2016 |