2N5551S Description
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
2N5551S Key Features
- Package Mounted On 99.5% Alumina 10 8 0.6 )
- V(BR)CEO IC=1mA, IB=0
- Collector-Emitter Saturation Voltage
- Base-Emitter Saturation Voltage
- Noise Figure
- Pulse Test : Pulse Width 300 , Duty Cycle 2%
- MAX. 50 50 50
- 0.15 V
- 300 MHz