Unisonic Technologies 2N5551
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
* High collector-emitter voltage: VCEO=160V * High current gain●
APPLICATIONS
* Telephone switching circuit * Amplifier● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - 2N5551G-x-AB3-R SOT-89 2N5551L-x-T92-B 2N5551G-x-T92-B TO-92 2N5551L-x-T92-K 2N5551G-x-T92-K TO-92 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B TO-92 2N5551L-x-T92-A-K 2N5551G-x-T92-A-K TO-92 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE EBC EBC ECB ECB Packing Tape Reel Tape Box Bulk Tape Box Bulk
● MARKING SOT-89 TO-92 Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-002.H 2N5551 NPN SILICON TRANSISTOR
●
ABSOLUTE MAXIMUM RATINGS
(TA=25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO 160 6 V V Collector Dissipation TO-92 SOT-89 PC 625 mW 500 mW Collector Current Junction Temperature IC 600 mA TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.