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2N5551 - SILICON NPN TRANSISTORS

Download the 2N5551 datasheet PDF. This datasheet also covers the 2N5550 variant, as both devices belong to the same silicon npn transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications.

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Note: The manufacturer provides a single datasheet file (2N5550-CENTRALSEMICONDUCTOR.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5550 2N5551 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5550 2N5551 Collector-Base Voltage VCBO 160 180 Collector-Emitter Voltage VCEO 140 160 Emitter-Base Voltage Continuous Collector Current VEBO 6.0 IC 600 Power Dissipation PD 625 Power Dissipation (TC=25°C) PD 1.