STMicroelectronics 2N5551HR
The 2N5551 and SOC5551 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).| Part No. | 2N5551HR |
|---|---|
| Datasheet | 2N5551HR Download |
| Manufacturer |  STMicroelectronics |
| Description | Rad-Hard 160V 0.5A NPN bipolar transistor |
| Buy | Stock & Price |
FEATURES
Vceo 160 V IC(max.) 0.5 A HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C● Hermetic packages
● ESCC qualified
● 100 krad
DESCRIPTION
Qualified as per ESCC 5202/019 specification and available in LCC-3 and UB hermetic packages, they are specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Device 2N5551RUBx 2N5551UBx SOC5551RHRx SOC5551HRx Product summary Qualification system Agency specification ESCC Flight 5201/019 ESCC Flight 5201/019 ESCC Flight 5201/019 ESCC Flight 5201/019 Note: See Table 7 for ordering information. Package UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - DS6657 - Rev 17 - February 2024 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Ab...
