2N5551HR Datasheet PDF - STMicroelectronics Hi-Rel NPN bipolar transistor Specs

2N5551HR - Hi-Rel NPN bipolar transistor

Datasheet Summary

Description

This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 22900.

Features

Vceo IC(max. ) 160 V 0.5 A.
Hermetic packages.
ESCC and JANS qualified.
Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max. ) 200 °C.

Datasheet Details

Part number	2N5551HR
Manufacturer	STMicroelectronics
File Size	255.85 KB
Description	Hi-Rel NPN bipolar transistor
Datasheet	2N5551HR Datasheet
Additional preview pages of the 2N5551HR datasheet.

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Full PDF Text Transcription

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2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N5551HR Features Vceo IC(max.) 160 V 0.5 A • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 22900.

Published: Feb 4, 2010 |