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2N5551HR

Manufacturer: STMicroelectronics

2N5551HR datasheet by STMicroelectronics.

2N5551HR datasheet preview

2N5551HR Datasheet Details

Part number 2N5551HR
Datasheet 2N5551HR_STMicroelectronics.pdf
File Size 255.85 KB
Manufacturer STMicroelectronics
Description Hi-Rel NPN bipolar transistor
2N5551HR page 2 2N5551HR page 3

2N5551HR Overview

This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 22900. Qualified as per ESCC 5201/019 and MIL-PRF-19500/767 specifications and available in LCC-3 and UB hermetic packages, it is specifically remended for space and harsh...

2N5551HR Key Features

  • Hermetic packages
  • ESCC and JANS qualified
  • Up to 100 krad(Si) low dose rate

2N5551 from other manufacturers

View 2N5551 datasheet index

Brand Logo Part Number Description Other Manufacturers
NTE Logo 2N5551 Silicon NPN Transistor NTE
Motorola Logo 2N5551 Amplifier Transistors Motorola
Fairchild Semiconductor Logo 2N5551 NPN General Purpose Amplifier Fairchild Semiconductor
ON Semiconductor Logo 2N5551 NPN Amplifier ON Semiconductor
SeCoS Logo 2N5551 NPN Transistor SeCoS
STMicroelectronics logo - Manufacturer

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2N5551HR Distributor

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