
	ON Semiconductor Electronic Components Datasheet

2N5655G Datasheet

Plastic NPN Silicon High-Voltage Power Transistors

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2N5655G, 2N5657G

Plastic NPN Silicon

High-Voltage Power

Transistors

These devices are designed for use in line−operated equipment such

as audio output amplifiers; low−current, high−voltage converters; and

AC line relays.

Features

• Excellent DC Current Gain

• High Current−Gain − Bandwidth Product

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N5655G

2N5657G

VCEO

250

350

Vdc

Collector−Base Voltage

2N5655G

2N5657G

VCB Vdc

275

375

Emitter−Base Voltage

Collector Current − Continuous

Collector Current − Peak

Base Current

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

VEB 6.0 Vdc

IC 0.5 Adc

ICM 1.0 Adc

IB 1.0 Adc

20 W

0.16 W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg – 65 to + 150 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Indicates JEDEC registered data.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case

Symbol

RqJC

Max

6.25

Unit

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

December, 2013 − Rev. 12

http://onsemi.com

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

250−350 VOLTS, 20 WATTS

COLLECTOR

2, 4

BASE

EMITTER

123

TO−225

CASE 77−09

STYLE 1

MARKING DIAGRAM

YWW

N565xG

2N565x

= Year

= Work Week

= Device Code

x = 5 or 7

= Pb−Free Package

ORDERING INFORMATION

Device

Package

Shipping

2N5655G

TO−225

(Pb−Free)

500 Units / Bulk

2N5657G

TO−225

(Pb−Free)

500 Units / Bulk

Publication Order Number:

2N5655/D


	ON Semiconductor Electronic Components Datasheet

2N5655G Datasheet

Plastic NPN Silicon High-Voltage Power Transistors

No Preview Available !

2N5655G, 2N5657G

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 100 mAdc (inductive), L = 50 mH)

2N5655G

2N5657G

VCEO(sus)

Vdc

250 −

350 −

Collector−Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

2N5655G

2N5657G

V(BR)CEO

Vdc

250 −

350 −

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

2N5655G

(VCE = 250 Vdc, IB = 0)

2N5657G

ICEO

−

mAdc

0.1

Collector Cutoff Current

(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)

2N5655G

(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)

2N5657G

(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)

2N5655G

(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)

2N5657G

ICEX

−

mAdc

0.1

1.0

Collector Cutoff Current

(VCB = 275 Vdc, IE = 0)

2N5655G

(VCB = 375 Vdc, IE = 0)

2N5657G

ICBO

−

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

−

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 50 mAdc, VCE = 10 Vdc)

(IC = 100 mAdc, VCE = 10 Vdc)

(IC = 250 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

hFE

−

30 250

15 −

5.0 −

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 100 mAdc, IB = 10 mAdc)

(IC = 250 mAdc, IB = 25 mAdc)

(IC = 500 mAdc, IB = 100 mAdc)

VCE(sat)

−

Vdc

1.0

2.5

Base−Emitter Voltage

(IC = 100 mAdc, VCE = 10 Vdc) (Note 3)

VBE Vdc

− 1.0

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4)

fT MHz

10 −

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 100 kHz)

Cob

−

Small−Signal Current Gain

(IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Indicates JEDEC registered data for 2N5655 Series.

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

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2N5655G Datasheet

Plastic NPN Silicon High-Voltage Power Transistors

2N5655G Datasheet

Plastic NPN Silicon High-Voltage Power Transistors

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