2N5655G, 2N5657G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc (inductive), L = 50 mH)
2N5655G
2N5657G
VCEO(sus)
Vdc
250 −
350 −
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
2N5655G
2N5657G
V(BR)CEO
Vdc
250 −
350 −
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
2N5655G
(VCE = 250 Vdc, IB = 0)
2N5657G
ICEO
−
−
mAdc
0.1
0.1
Collector Cutoff Current
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)
2N5655G
(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)
2N5657G
(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5655G
(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)
2N5657G
ICEX
−
−
−
−
mAdc
0.1
0.1
1.0
1.0
Collector Cutoff Current
(VCB = 275 Vdc, IE = 0)
2N5655G
(VCB = 375 Vdc, IE = 0)
2N5657G
ICBO
−
−
mAdc
10
10
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
−
mAdc
10
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 250 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
25
−
30 250
15 −
5.0 −
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 100 mAdc, IB = 10 mAdc)
(IC = 250 mAdc, IB = 25 mAdc)
(IC = 500 mAdc, IB = 100 mAdc)
VCE(sat)
−
−
−
Vdc
1.0
2.5
10
Base−Emitter Voltage
(IC = 100 mAdc, VCE = 10 Vdc) (Note 3)
VBE Vdc
− 1.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4)
fT MHz
10 −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
−
pF
25
Small−Signal Current Gain
(IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC registered data for 2N5655 Series.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
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