Datasheet4U Logo Datasheet4U.com

2N5655 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) DC Current Gain- : hFE= 30-250@IC= 0.1A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated equipment such as a

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N5655 POWER TRANSISTORS ON Semiconductor
2N5655 POWER TRANSISTORS Motorola
2N5655 (2N5655 - 2N5657) Silicon NPN Power Transistors SavantIC
2N5655G Plastic NPN Silicon High-Voltage Power Transistors ON Semiconductor
2N5653 n-channel JFET Siliconix

Other Datasheets by Inchange Semiconductor

Part Number Description
2N5656 NPN Transistor
2N5661 Silicon NPN Power Transistor
2N5665 Silicon NPN Power Transistor
2N5038 NPN Transistor
2N5108 Silicon NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistors 2N5655 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·DC Current Gain- : hFE= 30-250@IC= 0.1A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 275 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 0.