Datasheet4U Logo Datasheet4U.com

2N5655 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) DC Current Gain- : hFE= 30-250@IC= 0.1A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated equipment such as a

📥 Download Datasheet

Datasheet preview – 2N5655

Datasheet Details

Part number 2N5655
Manufacturer INCHANGE
File Size 191.13 KB
Description NPN Transistor
Datasheet download datasheet 2N5655 Datasheet
Additional preview pages of the 2N5655 datasheet.

📁 Similar Datasheet

  • 2N5655 - POWER TRANSISTORS (ON Semiconductor)
  • 2N5655 - POWER TRANSISTORS (Motorola)
  • 2N5655 - (2N5655 - 2N5657) Silicon NPN Power Transistors (SavantIC)
  • 2N5655G - Plastic NPN Silicon High-Voltage Power Transistors (ON Semiconductor)
  • 2N5653 - n-channel JFET (Siliconix)
  • 2N5653 - SWITCHING JFET (Motorola)
  • 2N5654 - n-channel JFET (Siliconix)
  • 2N5654 - SWITCHING JFET (Motorola)
  • 2N5656 - POWER TRANSISTORS (Motorola)
  • 2N5656 - (2N5655 - 2N5657) Silicon NPN Power Transistors (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistors 2N5655 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·DC Current Gain- : hFE= 30-250@IC= 0.1A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 275 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 0.
Published: |