Datasheet Details
| Part number | 2N5656 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 130.99 KB |
| Description | (2N5655 - 2N5657) Silicon NPN Power Transistors |
| Datasheet | 2N5656 2N5655 Datasheet (PDF) |
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Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N5656 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 130.99 KB |
| Description | (2N5655 - 2N5657) Silicon NPN Power Transistors |
| Datasheet | 2N5656 2N5655 Datasheet (PDF) |
|
|
|
·With TO-126 package ·High breakdown voltage APPLICATIONS ·For use in line-operated equipment such as audio output amplifiers;
low-current ,high-voltage converters;
and AC line relays PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N5655 2N5656 2N5657 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N5655 VCBO Collector-base voltage 2N5656 2N5657 2N5655 VCEO Collector-emitter voltage 2N5656 2N5657 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 275 325 375 250 300 350 6 0.5 1.0 0.25 20 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 2N5657 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5655 ICEO Collector cut-off current 2N5656 2N5657 2N5655 ICBO Collector cut-off current 2N5656 2N5657 ICEX IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Output capacitance IC=100mA ;IB=10mA IC=250mA ;IB=25mA SYMBOL 2N5655 2N5656 2N5657 CONDITIONS MIN 250 TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5656 | POWER TRANSISTORS | Motorola |
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2N5656 | NPN Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| 2N5655 | (2N5655 - 2N5657) Silicon NPN Power Transistors |
| 2N5657 | (2N5655 - 2N5657) Silicon NPN Power Transistors |
| 2N5600 | Silicon NPN Power Transistors |
| 2N5601 | Silicon PNP Power Transistors |
| 2N5602 | Silicon NPN Power Transistors |
| 2N5603 | Silicon PNP Power Transistors |
| 2N5604 | (2N5598 - 2N5604) Silicon NPN Power Transistors |
| 2N5605 | (2N5605 - 2N5611) Silicon PNP Power Transistors |
| 2N5606 | (2N5606 - 2N5612) Silicon NPN Power Transistors |
| 2N5607 | (2N5605 - 2N5611) Silicon PNP Power Transistors |