2N5656 Datasheet

The 2N5656 is a POWER TRANSISTORS.

Datasheet4U Logo
Part Number2N5656
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5655/D Plastic NPN Silicon High-Voltage Power Transistor 2N5655 2N5656 2N5657 0.5 AMPERE POWER TRANSISTORS NPN S. ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
* Excellent DC Current Gain
* hFE = 30
* 250 @ IC = 100 mAdc
* Current
*Gain
* Bandwidth Product
* fT = 10 MHz (Min) @ IC = 50 mAdc MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N5655 250 275 2N5656 300 325 6.0 0.5 1.0 2N5657 350 375 Unit Vdc Vdc Vdc Adc Adc Collector
*Emitter.
Part Number2N5656
Description(2N5655 - 2N5657) Silicon NPN Power Transistors
ManufacturerSavantIC
Overview ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN 1 2 . duct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5655 VCEO(SUS) Collector-emitter sustaining voltage 2N5656 2N5657 VCEsat-1 VCEsat-2 VCEsat-3 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter .
Part Number2N5656
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLI. ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 100mA ; L= 50mH 300 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 300 V VCE(sat)-1 Collector-Emitter Saturatio.